angle of incidence什么意思 angle of incidence音标、翻译、用法
angle of incidence音标
英 [ˈæŋɡl ɔv ˈinsidəns]
美 [ˈæŋɡəl ʌv ˈɪnsɪdəns]
angle of incidence翻译
释义
入射角；迎角；
英英释义
angle of incidence
n.the angle that a line makes with a line perpendicular to the surface at the point of incidence
同义词：incidence angle
angle of incidence用法
双语例句
The conventional tail must be at a negative angle of attack, and the Canard tail at a positive angle.
通常的尾翼必须处于负迎角，而鸭式尾翼则为正迎角。Contrarily, the optimal rotate speed and the optimal operation point of the turbine can be obtained from the mean optimal incident angle.
反之，利用文中给出的平均最佳进气迎角也可确定透平的最佳转速，进而确定最佳工况点。The prestack migration into space should be based on accurate isochrones through the heterogeneous velocity model and the wave incidence angles.
空间叠前偏移是基于精确的通过不均匀速度模型的等时线和波的入射角。On the basis of the measured incident angle modified coefficient of the collector panels, the relation between the daily and instantaneous efficiency is given.
在测试了该集热器阵列的入射角修正系数的基础上给出了全日效率与瞬时效率的关系。
权威例句
ANGLE OF INCIDENCE
angle of incidence
Angle of Incidence
Greek α Angle of Attack θ Angle of Pitch
Investigation of the angle of incidence in case of two adjoining fields in â¶Â°Co teletherapy in order to obtain a uniform dos...
Periodic and quasiperiodic nonquarterwave multilayer coating for 90° reflection phase retardance at 45° angle of incidence
Study of Mo‐, Au‐, and Ni‐implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellipsometry
Study of Mo‐, Au‐, and Ni‐implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellip...
Critical dimension analysis with simultaneous multiple angle of incidence measurements
Relationship of the total integrated scattering from multilayer-coated optics to angle of incidence, polarization, correlation lengt...
Pressure and angle of incidence effects in reactive planar magnetron sputtered ZnO layers
Kinetics of Film Formation in Acrylic Latices Studied with Multiple-Angle-of-Incidence Ellipsometry and Environmental SEM
Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by multiple‐angle‐of‐incidence single‐wav...